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Contact Director : Prof. Libero Zuppiroli Office: plan of access Secretary : Caroline Antonioli Pletscher Office: plan of access Address : EPFL-STI-IMX-LOMM Building PH Station 3 CH-1015 Lausanne Tel: +41 21 69 33375 Fax: +41 21 69 34470 E-mail: lomm@epfl.ch
LOMM / Project LOTFI
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Self-assembled monolayers as interface materials for optoelectronic devices Responsibles : S. Suarez, F.D. Fleischli, Ph. Bugnon, and L. Zuppiroli
Project Description
Main results
Right panel : Aluminum electrode work function shifts DF induced by various SAMs of benzoic acid derivatives. The work function shift is plotted versus the electrical dipole moment of the substituted benzene.
Organic field effect transistors made from acene materials Responsibles : M. Schär, F.D. Fleischli, S. Suarez, M. Longchamp, and L. Zuppiroli
Project Description
Left panel : Atomic force microscopy image (phase mode) of a polycrystalline pentacene thin film grown on sapphire, showing monomolecular steps.
Main results
We have compared the nucleation of pentacene islands onto polymer, silicon dioxide and alumina substrates. Whereas a critical nucleus size of two pentacene molecules is observed on all investigated substrates, the activation energy for nucleation depends significantly on the dielectric, due to different molecule-substrate interactions. We were able to optimize growth temperatures and rates on all substrates in order to obtain smooth crystalline pentacene films with grain sizes of the order of 10 microns. The results show that the morphology, crystal structure and molecular ordering of the first organic monolayer(s) at the pentacene/dielectric interface are essential determinants of carrier transport phenomena. To further investigate these interface effects, we have built a model organic field-effect transistor which consists essentially of a single layer of pentacene on an oxide substrate. Four-probe and two-probe transport measurements as a function of temperature and fields were performed in relation with structural near-field observations. The experimental results suggest a simple two-dimensional model where the equilibrium between free and trapped carriers at the oxide interface determines the OFET characteristics and performance. Collaborations : M. Brinkmann, D. Tsamados and A.M. Ionescu
Modeling charge transport and light emission in multilayer organic light emitting diodes Responsibles : S. Konezny, and L. Zuppiroli
Project Description
Main results
Right panel : Electron and hole density distribution inside the four layers device ITO/CuPc/a-NPD/Alq3/LiF-Al. Charge recombination and light emission do occur in the zone of the device where both electrons and holes reach a high concentration, here in the light emitting material Alq3. Collaborations : E. Tutis, and M.N. Bussac
Modeling charge transport in organic semiconductors
Responsibles : S. Konezny, and L. Zuppiroli
Project Description
Main results
Collaborations : M.N. Bussac
Tuning and trimming the optical properties of planar photonic crystals Responsibles : P. El-Kallassi, R. Ferrini, M. Schär, Ph. Bugnon, and L. Zuppiroli
Upper panel : Typical GaAs-based planar photonic crystal structure consisting of a triangular lattice of air holes with a lattice period a of 200 to 400 nm and a typical diameter d of 100 to 200 nm. Organic molecules are infiltrated into these holes. Their refractive index can be tuned resulting in significant modifications of the photonic band gap.
Project Description
Main results
Left panel : Experimental (black lines) and calculated (by a 2D-FDTD method: grey lines) transmission spectra through planar photonic crystals slabs: (a) without and (b) with liquid crystals. The fitted values for the air filling factor (f), the refractive index of the infiltrated material and the in-fill efficiency are reported in the figure. Collaborations : R. Houdré, Swiss NSF NCCR - Quantum Photonics, EU-Network of Excellence ePIXnet, and EU-COST Action P11
Fabrication of organic light emitting diodes on special glass substrates and light extraction Responsibles : J.-Y. Bengloan, Ph. Bugnon, R. Ferrini, and L. Zuppiroli
Left panel : Optoelectronic device fabrication facility - Deposition chamber. Right panel: 7 digits OLED structure. |
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